Phonon interactions in single-dopant-based transistors: temperature and size dependence

In this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. We use a 3D real-space non-equilibrium Green´s function (NEGF) approach where electron-phonon scattering is treated within the selfconsistent Born approximation (SCBA) through self-energies. We also use an analytic model to extend the validity of the acoustic phonon self-energy at low temperatures. Based on this model our simulations show the presence of a current hysteresis when reducing the temperature down to 150 K. The influence of channel length and nanowire cross-section on the dopant level contribution to the current is also discussed.