• DocumentCode
    3674554
  • Title

    T-shaped gate based on poly Si/polyimide supported layers

  • Author

    T. Lalinsky;P. Hrkut;L. Matay;I. Kostic;S. Hascik;P. Hudek

  • Author_Institution
    Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
  • fYear
    1998
  • Firstpage
    183
  • Lastpage
    186
  • Abstract
    A novel poly Si/polyimide dielectric bilayer system was designed to form a T-shaped gate on GaAs substrate using a two-step direct writing electron-beam lithography in combination with a selective reactive ion etching technique. Excellent breakdown properties and thermal stability of the supported polyimide layer were found also to be used for passivation of GaAs based T-shaped gate HFETs.
  • Keywords
    "Polyimides","Dielectric substrates","Gallium arsenide","Writing","Lithography","Etching","Electric breakdown","Thermal stability","Passivation","HEMTs"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
  • Print_ISBN
    0-7803-4909-1
  • Type

    conf

  • DOI
    10.1109/ASDAM.1998.730194
  • Filename
    730194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3674554