Title :
T-shaped gate based on poly Si/polyimide supported layers
Author :
T. Lalinsky;P. Hrkut;L. Matay;I. Kostic;S. Hascik;P. Hudek
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
A novel poly Si/polyimide dielectric bilayer system was designed to form a T-shaped gate on GaAs substrate using a two-step direct writing electron-beam lithography in combination with a selective reactive ion etching technique. Excellent breakdown properties and thermal stability of the supported polyimide layer were found also to be used for passivation of GaAs based T-shaped gate HFETs.
Keywords :
"Polyimides","Dielectric substrates","Gallium arsenide","Writing","Lithography","Etching","Electric breakdown","Thermal stability","Passivation","HEMTs"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730194
