Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors

Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are essential. In this work, the in-house 3D finite element Monte Carlo code with 2D Schrodinger equation based quantum correction serves as a base for implementation of a new multi-subband extended Prange & Nee (EPN) IRS model and for comparison with the previously used 3D Ando model. The transistors selected for the comparison are 10.7 nm gate length SOI Si FinFETs with two cross-sections: rectangular and triangular. The drive current for the rectangular device has been reduced by 25% when using the multi-subband EPN model and even more reduced for the triangular shape, by 44%, at VD = 0.7 V.