DocumentCode
3674605
Title
Macrostress formation in thin films and its investigation by X-ray diffraction
Author
P. Sutta;Q. Jackuliak
Author_Institution
Dept. of Phys., Mil. Acad., Mikulas, Slovakia
fYear
1998
Firstpage
227
Lastpage
230
Abstract
Elastic stresses and strains are almost always present in thin films deposited on substrates. In the majority of cases these stresses are residual stresses, introduced into the system during deposition or subsequent processing and they me mostly biaxial at the thin film substrate interface. Two significant reasons of macrostress formation in thin films can be distinguished thermal and/or epitaxial mismatch between the thin film and substrate thermal coefficients and lattice parameters.
Keywords
"Transistors","X-ray diffraction","Powders","Goniometers","Ceramics","NIST","Instruments","Palladium","Semiconductor thin films"
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730205
Filename
730205
Link To Document