A Surface-Field-Based Model for Nanowire MOSFETs With Spatial Variations of Doping Profiles

Author

Qi Cheng ; Chuyang Hong ; Kuo, J.B. ; Yijian Chen

Author_Institution

Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China

Volume

61

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

4040

Lastpage

4046

Abstract

We report a novel method to solve the nonlinear 1-D Poisson´s equation for the gate-all-around (GAA) nanowire MOSFETs with nonuniform doping profiles. An algebraic relation between the electric field and potential is identified to develop a surface-field-based compact model. Drain current is derived from the oxide-interface boundary condition to avoid the complicated surface-potential approach. As verified by the TCAD simulations, this analytic model is capable of continuously covering all operating regions of GAA nanowire MOSFETs with slowly varying doping profiles.

Keywords

MOSFET; Poisson equation; doping profiles; electric fields; electric potential; nonlinear equations; technology CAD (electronics); GAA nanowire MOSFET; TCAD simulations; doping profiles; drain current; electric field; electric potential; gate-all-around nanowire MOSFET; nonlinear 1D Poissons equation; oxide-interface boundary condition; surface-field-based model; Doping; Electric potential; MOSFET; Mathematical model; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Gate-all-around (GAA) nanowire MOSFET; Poisson’s equation; Poisson???s equation; spatial variations; surface-field-based model; surface-field-based model.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2364781

Filename

6953224