Title :
A Surface-Field-Based Model for Nanowire MOSFETs With Spatial Variations of Doping Profiles
Author :
Qi Cheng ; Chuyang Hong ; Kuo, J.B. ; Yijian Chen
Author_Institution :
Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
Abstract :
We report a novel method to solve the nonlinear 1-D Poisson´s equation for the gate-all-around (GAA) nanowire MOSFETs with nonuniform doping profiles. An algebraic relation between the electric field and potential is identified to develop a surface-field-based compact model. Drain current is derived from the oxide-interface boundary condition to avoid the complicated surface-potential approach. As verified by the TCAD simulations, this analytic model is capable of continuously covering all operating regions of GAA nanowire MOSFETs with slowly varying doping profiles.
Keywords :
MOSFET; Poisson equation; doping profiles; electric fields; electric potential; nonlinear equations; technology CAD (electronics); GAA nanowire MOSFET; TCAD simulations; doping profiles; drain current; electric field; electric potential; gate-all-around nanowire MOSFET; nonlinear 1D Poissons equation; oxide-interface boundary condition; surface-field-based model; Doping; Electric potential; MOSFET; Mathematical model; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Gate-all-around (GAA) nanowire MOSFET; Poisson’s equation; Poisson???s equation; spatial variations; surface-field-based model; surface-field-based model.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2364781
