• DocumentCode
    3676009
  • Title

    About the conference

  • fYear
    2015
  • fDate
    8/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Non-Volatile memory (NVM) technologies have demonstrated great potentials on improving many aspects of present and future memory hierarchy, offering high integration density, larger capacity, zero standby power and good resilience to soft errors. The recent research progress of various NVMs, e.g., NAND flash, PCM, STT-RAM, RRAM, FeRAM, etc., have drawn tremendous attentions from both academy and industry. Besides developing robust and scalable devices, the unique characteristics of these NVM technologies, such as readwrite asymmetry, stochastic programming behavior, performance-power-nonvolatility tradeoff etc., introduce plenty of opportunities and challenges for novel circuit designs, architectures, system organizations, and management strategies. There is an urgent need of technology invention, modeling, analysis, design and application of these NVMs ranging from circuit design level to system level.
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory System and Applications Symposium (NVMSA), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/NVMSA.2015.7304352
  • Filename
    7304352