Title :
Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors
Author_Institution :
Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
Abstract :
We report the effects of carrier concentration (NCH), indium (In) content, and crystallinity (Xc) on the electrical properties of indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs). The ITZO TFT with the lowest NCH, In content, and amorphous phase at the optimized oxygen flow rate has high field-effect mobility a (μFE) of 37.2 cm2/V·s, high ON/OFF current ratio (ION/IOFF) of ~ 1×107, and low subthreshold swing (S.S) of 0.93. With increasing NCH, In content, and Xc, μFE, ION/IOFF, and S.S surprisingly degraded to 14.4 cm2/V·s, ~ 4×104, and 4.01, respectively. Our high ITZO TFTs with μFE of 37.2 cm2/V·s, obtained thorough control of the NCH, In content, and Xc, was suitable for application to next generation ultrahigh resolution displays as well as high frame rate displays.
Keywords :
amorphous state; carrier density; carrier mobility; electric properties; thin film transistors; tin compounds; ITZO TFT; InSnZnO; amorphous phase; carrier concentration; crystallinity; electrical properties; field-effect mobility; frame rate displays; indium content; indium-tin-zinc-oxide thin-film transistors; next generation ultrahigh resolution displays; Chemicals; Indium; Iron; Next generation networking; Thin film transistors; Tin; Carrier concentration; In content; Indium-Tin-Zinc-oxide (ITZO); crystallinity; next-generation displays; thin-film transistor (TFT);
