Title :
Excess carrier lifetime in epitaxially grown layers of germanium on silicon
Author :
Satoshi Kako;Katsuya Oda;Tetemi Ido;Yasuhiko Arakawa
Author_Institution :
Institute of Industrial Science, die University of Tokyo, 4-6-1, Komaha, Meguro, Tokyo, 153-8505 Japan
Abstract :
We investigate the layer thickness dependence of the excess carrier lifetime of germanium on silicon by means of time-resolved photoluminescence. We find that a bulk lifetime > 90 ns is achievable for the undoped germanium.
Keywords :
"Charge carrier lifetime","Silicon","Germanium","Radiative recombination","Fitting","Surface fitting","Epitaxial growth"
Conference_Titel :
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
DOI :
10.1109/Group4.2015.7305918
