DocumentCode
3677269
Title
Fabrication of high bit rate, monolith ically integrated receivers in photonic BiCMOS technology
Author
D. Knoll;S- Lischke;L. Zimmermann;A. Awny;M. Kroh; Peczek;K. Voigt;K. Petermann
Author_Institution
IHP. Im Technologiepark 25, 15236 Frankfurt (Oder). Germany
fYear
2015
Firstpage
181
Lastpage
182
Abstract
We present results of photonic BiCMOS process development enabling the fabrication of monolithically integrated receivers for 40Gbps and beyond. Focus is on the challenge to fabricate simultaneously 200GHz SiGe HBTs and Ge photodiodes with enough bandwidth.
Keywords
"Photonics","BiCMOS integrated circuits","Receivers","Photodiodes","Heterojunction bipolar transistors","Annealing","Silicon germanium"
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
Type
conf
DOI
10.1109/Group4.2015.7305923
Filename
7305923
Link To Document