DocumentCode :
3677278
Title :
High-bandwidth, waveguide-coupled Ge p-i-n photodiode with high C- and L-band responsivity
Author :
S. Lischke;D. Knoll;C. Mai;A. Peczek;K. Voigt;E. Krune;K. Petenmann;L. Zimmermann;A. Mai
Author_Institution :
IHP, Im Tedmologiepark 25, 15236 Frankiurt (Oder), Germany
fYear :
2015
Firstpage :
17
Lastpage :
18
Abstract :
We present a germanium photodiode showing, at -2V bias, responsivity exceeding 0.8A/W across the entire C- and L-band, together with 40GHz zero bias bandwidth, which strongly extends the application range of silicon photonics.
Keywords :
"Optical waveguides","L-band","Bandwidth","Germanium","Silicon photonics","Photodiodes","Gratings"
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
Type :
conf
DOI :
10.1109/Group4.2015.7305932
Filename :
7305932
Link To Document :
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