• DocumentCode
    3677293
  • Title

    Highly strained Ge on Si microdisks with silicon nitride stressors

  • Author

    R. W. Millar;K. Gallacher;J. Frigerio;D. Chrastina;G. Isella;D.J. Paul

  • Author_Institution
    School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, U.K.
  • fYear
    2015
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    Resonant emission is observed up to ~2.3μm from Ge on Si microdisks, strained by silicon nitride stressors. These results demonstrate that compact, highly strained Ge cavities are achievable on Si substrates using CMOS compatible processes.
  • Keywords
    "Silicon","Silicon nitride","CMOS integrated circuits","Germanium","Cavity resonators","Tensile strain"
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
  • Type

    conf

  • DOI
    10.1109/Group4.2015.7305948
  • Filename
    7305948
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3677293