Title :
Highly strained Ge on Si microdisks with silicon nitride stressors
Author :
R. W. Millar;K. Gallacher;J. Frigerio;D. Chrastina;G. Isella;D.J. Paul
Author_Institution :
School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, U.K.
Abstract :
Resonant emission is observed up to ~2.3μm from Ge on Si microdisks, strained by silicon nitride stressors. These results demonstrate that compact, highly strained Ge cavities are achievable on Si substrates using CMOS compatible processes.
Keywords :
"Silicon","Silicon nitride","CMOS integrated circuits","Germanium","Cavity resonators","Tensile strain"
Conference_Titel :
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
DOI :
10.1109/Group4.2015.7305948
