DocumentCode
3677334
Title
Strained Ge nanowire with high-Q optical cavity for Ge laser applications
Author
Donguk Nam;Jan Petykiewicz;David S. Sukhdeo;Shashank Gupta;Sonia Buckley;Jelena Vučković;Krishna C. Saraswat
Author_Institution
Department of Electronic Engineering, Inha University, Incheon, 402-751, Korea
fYear
2015
Firstpage
135
Lastpage
136
Abstract
We present a novel structure that simultaneously achieves high tensile strain, pseudo-heterostructure, and high-Q optical cavity in a pure Ge layer. Employing our structure in a GeSn layer will enable a truly practical Si-compatible laser.
Keywords
"Optical device fabrication","Optical reflection","Cavity resonators","Optical imaging","Strain","Optical pumping","Optical resonators"
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2015 IEEE 12th International Conference on
Type
conf
DOI
10.1109/Group4.2015.7305989
Filename
7305989
Link To Document