Implementation of Trench Schottky Barrier Diodes on InGaAs for Power Integrated Circuits

In this paper, we compare the performance of three lateral Schottky-barrier diodes namely conventional Schottky-barrier (CSB), Trench Side-wall Schottky-barrier (TSSB) and Trench Oxide Schottky-barrier (TOSB) implemented on InGaAs. These Schottky diodes can be suitably integrated with other power devices in high speed power integrated circuits. Two dimensional numerical simulations have been performed to analyse and compare the performance of these devices. Our results show that an appreciable amount of improvement in reverse blocking voltage and reverse leakage current can be obtained from trench structures without degradation in forward voltage. The TOSB structure is shown to achieve two times higher breakdown voltage with 23% reduction in reverse leakage current in comparison to the CSB diode. The reason for large improvement in reverse characteristic is suppressed barrier lowering effect due to reduction in electric field at the Schottky contact in TOSB structure. The forward voltage drop of all the devices is as low as 0.4V at a forward current density of 100 A/cm2.