DocumentCode :
3678745
Title :
The compact and high power density 7th generation IGBT module
Author :
Alexander Theisen;T. Heinzel;J. Kawabata;Y. Kusunoki;Y. Nishimura;Y. Onozawa;Y. Kobayashi;O. Ikawa
Author_Institution :
Fuji Electric Europe GmbH, Goethering 58, 63067 Offenbach am Main, Germany
fYear :
2015
Firstpage :
1
Lastpage :
10
Abstract :
Recently the main requirements found in the market are further downsizing and higher efficiency of power conversion systems. Enhanced power density of the power modules will be the key to succeed. The increasing package reliability in higher junction temperature operation will be the major challenge. By further improvement of the chip characteristics and the development of new high reliability package materials and technologies, the performance of the modules were significantly improved. Additionally, the maximum operating temperature was even increased to up to 175°C. The new 7th generation IGBT module realized further downsizing and higher efficiency of power conversion systems.
Keywords :
"Insulated gate bipolar transistors","Switches","Density measurement","Power system measurements","Reliability","Power conversion","Temperature"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7309121
Filename :
7309121
Link To Document :
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