DocumentCode
3678788
Title
The effect of different stray inductances on the performance of various types of IGBTs — Is less always better?
Author
Stefan Hain;Mark-M. Bakran;Christian Jaeger;Franz-J. Niedernostheide;Daniel Domes;Daniel Heer
Author_Institution
University of Bayreuth, Department of Mechatronics, Center of Energy Technology, Universitä
fYear
2015
Firstpage
1
Lastpage
9
Abstract
In this paper, the effect of different stray inductances on the performance of various combinations of different types of IGBTs and freewheeling diodes was studied. Therefore, a fast switching IGBT4 High-Speed was combined with either a SiC Schottky diode or a Si bipolar diode. It was analyzed how the switching losses are affected by the type of the freewheeling diode, the stray inductance and to what extent a faster switch and diode can be exploited in a low inductance circuit.
Keywords
"Insulated gate bipolar transistors","Schottky diodes","Silicon carbide","Inductance","Silicon","Switches","Voltage control"
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type
conf
DOI
10.1109/EPE.2015.7309166
Filename
7309166
Link To Document