Title :
Investigation of long-term parameter variations of SiC power MOSFETs
Author :
Diane-Perle Sadik;Jang-Kwon Lim;Per Ranstad;Hans-Peter Nee
Author_Institution :
Electrical Energy Conversion, School of Electrical Engineering, KTH Royal Institute of Technology, Teknikringen 33, Stockholm, Sweden
Abstract :
Experimental investigations on the gate-oxide and body-diode reliability of commercially available Silicon Carbide (SiC) MOSFETs from the second generation are performed. The body-diode conduction test is performed with a current density of 50 A/cm2 in order to determine if the body-diode of the MOSFETs is free from bipolar degradation. The second test is stressing the gate-oxide. A negative bias is applied on the gate oxide in order to detect and quantify potential drifts.
Keywords :
"Silicon carbide","Threshold voltage","MOSFET","Reliability","Logic gates","Stress","Temperature measurement"
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
DOI :
10.1109/EPE.2015.7309314
