• DocumentCode
    3678929
  • Title

    Investigation of long-term parameter variations of SiC power MOSFETs

  • Author

    Diane-Perle Sadik;Jang-Kwon Lim;Per Ranstad;Hans-Peter Nee

  • Author_Institution
    Electrical Energy Conversion, School of Electrical Engineering, KTH Royal Institute of Technology, Teknikringen 33, Stockholm, Sweden
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    Experimental investigations on the gate-oxide and body-diode reliability of commercially available Silicon Carbide (SiC) MOSFETs from the second generation are performed. The body-diode conduction test is performed with a current density of 50 A/cm2 in order to determine if the body-diode of the MOSFETs is free from bipolar degradation. The second test is stressing the gate-oxide. A negative bias is applied on the gate oxide in order to detect and quantify potential drifts.
  • Keywords
    "Silicon carbide","Threshold voltage","MOSFET","Reliability","Logic gates","Stress","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7309314
  • Filename
    7309314
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3678929