DocumentCode
3678983
Title
Switching speed limitations of high power IGBT modules
Author
Bogdan Ioan Incau;Ionut Trintis;Stig Munk-Nielsen
Author_Institution
Department of Energy Technology, Aalborg University, Pontoppidanstraede 101, DK-9220, Aalborg, Denmark
fYear
2015
Firstpage
1
Lastpage
8
Abstract
In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions.
Keywords
"Logic gates","Insulated gate bipolar transistors","Switches","Inductance","Resistance","Transient analysis","Temperature measurement"
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type
conf
DOI
10.1109/EPE.2015.7309369
Filename
7309369
Link To Document