• DocumentCode
    3678998
  • Title

    A new standard IGBT housing for high-power converters

  • Author

    Eberhard Ulrich Krafft;Bernd Laska;Andreas Nagel;Jan Weigel

  • Author_Institution
    SIEMENS AG Vogelweiherstr. 1-15 Nuremberg, Germany
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    11
  • Abstract
    In the field of high-power converters, the standard IGBT module housing is the Ihm / Ihv established by Eupec during the 1990s. This paper explains the limitations of this housing and presents approaches for a new, next-generation housing. This new housing design targets a reduction of the leakage inductance and a significant power density improvement. With regard to the highest power densities for high-power traction converters, initial results are shown for converters using a reverse conducting diode controlled (RCDC) IGBT.
  • Keywords
    "Insulated gate bipolar transistors","Inductance","Inverters","Heating","Silicon carbide","Standards","Schottky diodes"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7309384
  • Filename
    7309384