DocumentCode :
3678998
Title :
A new standard IGBT housing for high-power converters
Author :
Eberhard Ulrich Krafft;Bernd Laska;Andreas Nagel;Jan Weigel
Author_Institution :
SIEMENS AG Vogelweiherstr. 1-15 Nuremberg, Germany
fYear :
2015
Firstpage :
1
Lastpage :
11
Abstract :
In the field of high-power converters, the standard IGBT module housing is the Ihm / Ihv established by Eupec during the 1990s. This paper explains the limitations of this housing and presents approaches for a new, next-generation housing. This new housing design targets a reduction of the leakage inductance and a significant power density improvement. With regard to the highest power densities for high-power traction converters, initial results are shown for converters using a reverse conducting diode controlled (RCDC) IGBT.
Keywords :
"Insulated gate bipolar transistors","Inductance","Inverters","Heating","Silicon carbide","Standards","Schottky diodes"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7309384
Filename :
7309384
Link To Document :
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