DocumentCode
3678998
Title
A new standard IGBT housing for high-power converters
Author
Eberhard Ulrich Krafft;Bernd Laska;Andreas Nagel;Jan Weigel
Author_Institution
SIEMENS AG Vogelweiherstr. 1-15 Nuremberg, Germany
fYear
2015
Firstpage
1
Lastpage
11
Abstract
In the field of high-power converters, the standard IGBT module housing is the Ihm / Ihv established by Eupec during the 1990s. This paper explains the limitations of this housing and presents approaches for a new, next-generation housing. This new housing design targets a reduction of the leakage inductance and a significant power density improvement. With regard to the highest power densities for high-power traction converters, initial results are shown for converters using a reverse conducting diode controlled (RCDC) IGBT.
Keywords
"Insulated gate bipolar transistors","Inductance","Inverters","Heating","Silicon carbide","Standards","Schottky diodes"
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type
conf
DOI
10.1109/EPE.2015.7309384
Filename
7309384
Link To Document