DocumentCode :
3679004
Title :
Diode snappiness from a user´s perspective
Author :
Jorge Mari;Fabio Carastro;Max-Josef Kell;Peter Losee;Thomas Zoels
Author_Institution :
GE Global Research, Freisinger Landstr. 50, 85748 Garching b. Mü
fYear :
2015
Firstpage :
1
Lastpage :
8
Abstract :
This paper deals with reverse recovery and snappiness in high voltage PiN diodes as the ones currently used in high power electronics applications. It suggests a practical quantitative definition for the occurrence of snappiness and investigates unusual phenomena that might occur during reverse recovery.
Keywords :
"Oscillators","Insulated gate bipolar transistors","Inductance","Voltage control","Damping","PIN photodiodes","Standards"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7309390
Filename :
7309390
Link To Document :
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