DocumentCode :
3679070
Title :
Online temperature estimation of a high-power 4.5 kV IGBT module based on the gate-emitter threshold voltage
Author :
Martin Hoeer;Markus Meissner;Felipe Filsecker;Steffen Bernet
Author_Institution :
Technische Universitä
fYear :
2015
Firstpage :
1
Lastpage :
8
Abstract :
An online temperature estimation method for IGBTs has been developed. It is based on the gate-emitter threshold voltage captured during the turn-on transient, which can be used as a temperature-sensitive electrical parameter. A dedicated measurement board directly connected to the power device was designed and tested in a high-power 4.5-kV IGBT module over its whole operation range.
Keywords :
"Temperature measurement","Voltage measurement","Insulated gate bipolar transistors","Current measurement","Semiconductor device measurement","Temperature sensors","Threshold voltage"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7309459
Filename :
7309459
Link To Document :
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