Analysis of Gate-Driver Circuit requirements for H-Bridge Based Converters with GaN HFETs

The enhanced Gallium-Nitride (GaN) power transistors have recently emerged as one of the promising next generations for power switches for high frequency and high power density switch mode power converters. This paper analyses and describes the requirements of a high frequency Quad Gate Driver (4 drivers) which will be embedded in an isolated low voltage H-Bridge based converter (up to 100V). This work is on the one hand based on simulation results of the Quad Gate Driver and on the other hand the experimental results for a 150W, 30V/5A DAB-GaN prototype operating at 1 MHz switching frequency with off-the-shelf gate drivers.