• DocumentCode
    3679077
  • Title

    Three-phase voltage source inverter using SiC MOSFETs — Design and Optimization

  • Author

    Hani Muhsen;Sebastian Hiller;Josef Lutz

  • Author_Institution
    CHEMNITZ UNIVERSITY OF TECHNOLOGY, Reichenhainer Straß
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    This work aims at designing a three-phase voltage source inverter using SiC MOSFET, which is dedicated to electric vehicle applications. Power losses of the SiC MOSFET will be analyzed, and general guidelines for a minimum heat-sink size selection based on the static thermal behavior will be addressed. Furthermore, EMI parasitic parameters resulting from the traces´ inductances and the heat-sink will be estimated based on the physical behavior and the layout of the power circuit without the requirements of commercial software tools. The estimated EMI behavior of the voltage source inverter will be compared with the experimental results within the conducted EMI range in order to validate the analysis.
  • Keywords
    "Electromagnetic interference","Silicon carbide","MOSFET","Inverters","Switches","Heating","Switching loss"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7309466
  • Filename
    7309466