DocumentCode
3679082
Title
Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter
Author
Georg Tolstoy;Per Ranstad;Juan Colmenares;Florian Giezendanner;Hans-Peter Nee
Author_Institution
KTH ROYAL INSTITUTE OF TECHNOLOGY Teknikringen 33 Stockholm, Sweden
fYear
2015
Firstpage
1
Lastpage
9
Abstract
SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to improve the efficiency of resonant converters. The losses of the full-bridge inverter are well below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to reach even higher frequencies. An experimental setup is built and two different full-bridge inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes and one with SiC BJTs and SiC Schottky diodes.
Keywords
"Silicon carbide","Snubbers","MOSFET","Zero voltage switching","Loss measurement","Resonant frequency","Frequency modulation"
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type
conf
DOI
10.1109/EPE.2015.7309472
Filename
7309472
Link To Document