Simscape Based Ultra-Fast Design Exploration of Graphene-Nanoelectronic Systems

This paper presents non-EDA based design simulation using Simscape for graphene based nanoelectronic systems. The objective of this paper is to explore ultra-fast design for analog devices using substitutes to conventional but time intensive EDA simulations such as SPICE. A GFET behavioral model is presented where the model is based on the drift-diffusion conduction mechanism of the dual-gate device. The kink region of the I -- V characteristic is modeled via a displacement current. A case study design circuit, an all graphene based low noise amplifier (LNA) is presented. The results show this to be a viable alternative approach to simulate GFET based circuits and systems in addition to existing SPICE, VHDL-AMS or Verilog-A based flows. To the best of the authors´ knowledge, this is the first ever paper presenting a Simscape® model of a GFET device and also performing design exploration of GFET based RF circuits using Simscape®.