DocumentCode :
3679137
Title :
Radiative Effects on MRAM-Based Non-Volatile Elementary Structures
Author :
Jeremy Lopes;Gregory Di Pendina;Eldar Zianbetov;Edith Beigne;Lionel Torres
Author_Institution :
INAC-SPINTEC, Univ. Grenoble Alpes, Grenoble, France
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
321
Lastpage :
326
Abstract :
Radiation robust circuit design for harsh environments like space is a big challenge for today engineers and researchers. As circuits become more and more complex and CMOS processes get denser and smaller, their immunity towards particle strikes decreases drastically. This work has for objective to improve the System on Chip (SoC) robustness against particle attacks targeting very advanced processes. This should be possible combining three already proven robust design techniques: Asynchronous communication, Silicon on Insulator (SOI) technologies and Spintronics. The combination of these three techniques should give some fundamentally new architecture with higher performances than what is available today in terms of robustness but also in terms of speed, consumption and surface.
Keywords :
"Transistors","Robustness","Magnetic tunneling","Junctions","Switches","Protocols","Silicon-on-insulator"
Publisher :
ieee
Conference_Titel :
VLSI (ISVLSI), 2015 IEEE Computer Society Annual Symposium on
Type :
conf
DOI :
10.1109/ISVLSI.2015.71
Filename :
7309587
Link To Document :
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