On the short circuit robustness evaluation of silicon carbide high power modules

The paper deals with the evaluation of robustness of high power Silicon Carbide power electronic modules under short circuit conditions. The severity of the tests is usually related to the achievement of the real failure mode which drives the device to withstand a big amount of energy. A short circuit analysis in hard switched fault (HSF) mode at different voltage levels showed a short circuit survivability time of over 10μs for some of the tested power modules meaning an achievement of similar and higher level of robustness if compared to their counterpart Si devices. Experimental tests will be shown and analyzed under different voltage conditions. The tests described in the paper have been targeted to evaluate the capability of the device to withstand extremely severe condition when they are used in a high power converter.