• DocumentCode
    3679639
  • Title

    Sub-threshold startup charge pump using depletion MOSFET for a low-voltage harvesting application

  • Author

    Gaël Pillonnet;Thomas Martinez

  • Author_Institution
    Univ. Grenoble Alpes, F-38000 Grenoble, France, and CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
  • fYear
    2015
  • Firstpage
    3143
  • Lastpage
    3147
  • Abstract
    This paper presents a fully integrated CMOS start-up circuit for a low voltage battery-less harvesting application. The proposed topology is based on a step-up charge pump using depletion transistors instead of enhancement transistors. With this architecture, we can obtain a self-starting voltage below the enhancement transistor´s threshold due to its normally-on operation. The key advantages are the CMOS compatibility, inductor-less solution and no extra post-fabrication processing. The topology has been simulated in 0.18μm technology using a transistor-level model and has been compared to the traditional charge pump structure. The depletion-based voltage doubler charge pump enables operation from an input voltage as low as 250mV compared to 400mV in an enhancement-based one. The proposed topology can also achieve other conversion ratios such as 1:-1 inverter or 1:N step-up.
  • Keywords
    "Charge pumps","Topology","MOSFET","Threshold voltage","Energy harvesting","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
  • ISSN
    2329-3721
  • Electronic_ISBN
    2329-3748
  • Type

    conf

  • DOI
    10.1109/ECCE.2015.7310100
  • Filename
    7310100