DocumentCode
3679813
Title
Switching frequency modulation for GaN-based power converters
Author
B. Weiss;R. Reiner;R. Quay;P. Waltereit;F. Benkhelifa;M. Mikulla;M. Schlechtweg;O. Ambacher
Author_Institution
Fraunhofer Institute of Applied Solid State Physics Freiburg, Germany
fYear
2015
Firstpage
4361
Lastpage
4366
Abstract
The effects on the EMI spectrum for various switching frequency modulation (SFM) scenarios in a high frequency boost converter are investigated in this paper. A GaN-device and a Si-device are compared with respect to their EMI behavior, which results from different gate charges and therefore different voltage gradients dv/dt on the power lines. First, the dynamic characteristics of the GaN-HEMT are demonstrated in detail. Then the behavior in the time domain and the frequency domain for switching operations at 300 kHz with various frequency modulation settings and an output power of 250 W are presented.
Keywords
"Frequency modulation","Switches","Gallium nitride","Frequency measurement","Silicon","Electromagnetic interference"
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
ISSN
2329-3721
Electronic_ISBN
2329-3748
Type
conf
DOI
10.1109/ECCE.2015.7310276
Filename
7310276
Link To Document