Static and dynamic performance assessment of commercial SiC MOSFET power modules

This paper deals with static and dynamic measurements performed with full SiC MOSFET power modules. The voltage rating of the power modules is 1200 V and the current rating is 800 A. The on-resistances (R_ON) of the power modules were measured to be 6.0-10.0 mΩ, the measured blocking voltages were 1300-1400 V, and the threshold voltages were found to be around 3.0-3.5 V at 300 K. Evaluation of the dynamic performance has been carried out in a double-pulse tester with the use of commercially available gate drivers. A clean (i.e., almost oscillation and overshoot free) turn on and turn off transient behavior is obtained with negligible reverse recovery losses. The measured turn-on and turn-off losses at 800 V, 340 A, were 117 mJ and 40 mJ, respectively. With fixed supply voltage and load current, the energy-loss increases linearly with the gate resistance when varied from 2.5 to 20 mΩ. The energy losses remain insensitive with variation of temperature for a fixed supply voltage and current when tested up to the prescribed junction temperature of 150 °C.