DocumentCode
3679994
Title
Evaluating different implementations of online junction temperature sensing for switching power semiconductors
Author
He Niu;Robert D. Lorenz
Author_Institution
University of Wisconsin-Madison, WEMPEC Madison, WI, 53706
fYear
2015
Firstpage
5696
Lastpage
5703
Abstract
Switching power semiconductor online junction temperature (Tj) sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online Tj sensing methods. This paper includes Tj sensing methods based on device power dissipation, Tj sensing methods based on the “diode-on-die technology”, Tj sensing methods based on device on-state analysis, and Tj sensing methods based on device switching transients. Advantages and limits of these methods are also provided.
Keywords
"Insulated gate bipolar transistors","Switches","Semiconductor device measurement","Temperature sensors","Current measurement","MOSFET"
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
ISSN
2329-3721
Electronic_ISBN
2329-3748
Type
conf
DOI
10.1109/ECCE.2015.7310460
Filename
7310460
Link To Document