• DocumentCode
    3679994
  • Title

    Evaluating different implementations of online junction temperature sensing for switching power semiconductors

  • Author

    He Niu;Robert D. Lorenz

  • Author_Institution
    University of Wisconsin-Madison, WEMPEC Madison, WI, 53706
  • fYear
    2015
  • Firstpage
    5696
  • Lastpage
    5703
  • Abstract
    Switching power semiconductor online junction temperature (Tj) sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online Tj sensing methods. This paper includes Tj sensing methods based on device power dissipation, Tj sensing methods based on the “diode-on-die technology”, Tj sensing methods based on device on-state analysis, and Tj sensing methods based on device switching transients. Advantages and limits of these methods are also provided.
  • Keywords
    "Insulated gate bipolar transistors","Switches","Semiconductor device measurement","Temperature sensors","Current measurement","MOSFET"
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
  • ISSN
    2329-3721
  • Electronic_ISBN
    2329-3748
  • Type

    conf

  • DOI
    10.1109/ECCE.2015.7310460
  • Filename
    7310460