DocumentCode :
3680059
Title :
Challenges in switching waveforms measurement for a high-speed switching module
Author :
C. F. Tong;A. Nawawi;Yitao Liu;Shan Yin;K. J. Tseng;Yong Liu;K. Y. See;A. Sakanova;Rejeki Simanjorang;C. J. Gajanayake;A. Gupta
Author_Institution :
Rolls-Royce@NTU Corporate Lab, Nanyang Technological University Singapore
fYear :
2015
Firstpage :
6175
Lastpage :
6179
Abstract :
As SiC MOSFET is moving towards high current rating through parallel devices in a module, the ability to switch it fast with minimum switching loss becomes a new challenge. Amid this new challenge, power converter designers need to deal with more demanding measurement method to obtain correct switching waveforms. Switching waveforms are an important asset for converter designers because they can reveal vital parasitic information, indicate any potential overshoot or undershoot and estimate the switching loss. This paper shares the experimental work results, its measurement techniques (current and voltage) and test setup use to obtain minimum voltage overshoot of a 5 parallel SiC devices module. The cable length (of voltage probe) is shown to directly affect the switching loss estimation especially when a fast 5Ω gate driver resistance is used.
Keywords :
"Probes","Silicon carbide","Switches","Switching loss","MOSFET","Voltage measurement","Bandwidth"
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
ISSN :
2329-3721
Electronic_ISBN :
2329-3748
Type :
conf
DOI :
10.1109/ECCE.2015.7310525
Filename :
7310525
Link To Document :
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