DocumentCode :
3680127
Title :
Three-phase 4.16 kV medium voltage grid tied AC-DC converter based on 15 kV/40 a SiC IGBTs
Author :
Sachin Madhusoodhanan;Awneesh Tripathi;Krishna Mainali;Arun Kadavelugu;Dhaval Patel;Subhashish Bhattacharya;Kamalesh Hatua
Author_Institution :
FREEDM Systems Center, Department of ECE, North Carolina State University
fYear :
2015
Firstpage :
6675
Lastpage :
6682
Abstract :
Recently, with the emergence of Wide Bandgap semiconductor devices having higher blocking voltage capabilities and higher switching speed, ac-dc converters for Medium Voltage (MV) and Low Voltage (LV) dc micro-grid applications are becoming popular. In this paper, the first time experimental demonstration of such a 3-phase, isolated ac-dc power converter based on the newly developed 15 kV/40 A SiC IGBT is presented for 4.16 kV ac distribution grid interface. The presented converter consists of two bidirectional stages - the 4.16 kV ac to 8 kV dc front end converter followed by an 8 kV dc to 480 V dc dual active bridge converter with high frequency isolation. These stages are switched at 5 kHz and 10 kHz respectively. The converter design is presented along with experimental validation on a prototype at 9.6 kW.
Keywords :
"Insulated gate bipolar transistors","Silicon carbide","Logic gates","Switches","Capacitors","Voltage control","Capacitance"
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
ISSN :
2329-3721
Electronic_ISBN :
2329-3748
Type :
conf
DOI :
10.1109/ECCE.2015.7310594
Filename :
7310594
Link To Document :
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