DocumentCode
3680832
Title
JBS power-rectifiers for 1.7kV applications with conduction properties close to pure Schottky-design
Author
H Bartolf;A Mihaila;L Knoll;V K Sundaramoorthy;R A Minamisawa;E Bianda
Author_Institution
ABB Switzerland Ltd, Corporate Research, Segelhofstrasse 1K, 5405 Baden-Daettwil, Switzerland
fYear
2015
Firstpage
1
Lastpage
10
Abstract
This paper discusses an elaborated study about the design of Junction-Barrier Schottky (JBS) diodes regarding the width (w) and spacing (s) of the implanted p+ pattern, utilizing epitaxial drift-layer specifications (4H-SiC) suitable for 1.7 kV applications. The impact of the w/s design-ratio on the blocking characteristics, the unipolar ON-state performance as well as moderation of surge current events are investigated. Finally, we report experimental results on successfully manufactured 1.7 kV JBS power-rectifiers demonstrating the practical validity of our numerical approach.
Keywords
"Rectifiers","Surges","Surge protection","Performance evaluation","Schottky diodes","Silicon carbide","Numerical simulation"
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type
conf
DOI
10.1109/EPE.2015.7311684
Filename
7311684
Link To Document