DocumentCode :
3680856
Title :
9 kW SiC MOSFET based DC/DC converter
Author :
Ł. J. Niewiara;T. Tarczewski;M. Skiwski;L. M. Grzesiak
Author_Institution :
INSTITUTE OF PHYSICS, FACULTY OF PHYSICS, ASTRONOMY AND INFORMATICS, NICOLAUS COPERNICUS UNIVERSITY, Grudziadzka 5, Torun, Poland
fYear :
2015
Firstpage :
1
Lastpage :
9
Abstract :
In this paper a 9 kW DC/DC converter based on SiC MOSFET devices is presented. Precise control of the output voltage is realized with the help of a state feedback controller with an additional integral action. Simulation and experimental test results as well as an efficiency of DC/DC converter are presented. The behavior of the converter was investigated during no-load and variable load operation. Device efficiency was also investigated and it was found that the efficiency exceed 98% in a wide operating range.
Keywords :
"Voltage control","Silicon carbide","Switching frequency","State feedback","Voltage measurement","MOSFET"
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type :
conf
DOI :
10.1109/EPE.2015.7311709
Filename :
7311709
Link To Document :
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