• DocumentCode
    3680856
  • Title

    9 kW SiC MOSFET based DC/DC converter

  • Author

    Ł. J. Niewiara;T. Tarczewski;M. Skiwski;L. M. Grzesiak

  • Author_Institution
    INSTITUTE OF PHYSICS, FACULTY OF PHYSICS, ASTRONOMY AND INFORMATICS, NICOLAUS COPERNICUS UNIVERSITY, Grudziadzka 5, Torun, Poland
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    In this paper a 9 kW DC/DC converter based on SiC MOSFET devices is presented. Precise control of the output voltage is realized with the help of a state feedback controller with an additional integral action. Simulation and experimental test results as well as an efficiency of DC/DC converter are presented. The behavior of the converter was investigated during no-load and variable load operation. Device efficiency was also investigated and it was found that the efficiency exceed 98% in a wide operating range.
  • Keywords
    "Voltage control","Silicon carbide","Switching frequency","State feedback","Voltage measurement","MOSFET"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7311709
  • Filename
    7311709