DocumentCode
3680906
Title
A comprehensive investigation on the short circuit performance of MW-level IGBT power modules
Author
Rui Wu;Paula Diaz Reigosa;Francesco Iannuzzo;Huai Wang;Frede Blaabjerg
Author_Institution
Aalborg University, Pontoppidanstraede 101, Aalborg, Denmark
fYear
2015
Firstpage
1
Lastpage
9
Abstract
This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.
Keywords
"Insulated gate bipolar transistors","Multichip modules","Logic gates","Current distribution","Short-circuit currents","Inductance","Transient analysis"
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
Type
conf
DOI
10.1109/EPE.2015.7311761
Filename
7311761
Link To Document