• DocumentCode
    3680929
  • Title

    Investigation of deep levels in SiC-Schottky diodes with frequency resolved admittance spectroscopy

  • Author

    Eric Pertermann;Josef Lutz;R. K. Sharma;P. Hazdra;S. Popelka;Hans Peter Felsl;Franz-Josef Niedernostheide;Hans-Joachim Schulze

  • Author_Institution
    Chair of Power Electronics and EMC, Technische Universitä
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    We show that the technique of Frequency Resolved Admittance Spectroscopy (FRAS) allows the identification of deep traps with reduced measurement effort compared to Deep Level Transient Spectroscopy (DLTS). This is shown by the analysis of radiation defects introduced in n-type 4H-SiC 1700V Schottky diodes.
  • Keywords
    "Temperature measurement","Frequency measurement","Semiconductor device measurement","Energy states","Schottky diodes","Admittance","Capacitance"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE´15 ECCE-Europe), 2015 17th European Conference on
  • Type

    conf

  • DOI
    10.1109/EPE.2015.7311785
  • Filename
    7311785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3680929