DocumentCode
3682253
Title
Theoretical analyses and modeling for nanoelectronics
Author
G. Baccarani;E. Baravelli;E. Gnani;A. Gnudi;S. Reggiani
Author_Institution
ARCES-DEI, University of Bologna, Via Toffano 2 - 40125, Bologna, Italy
fYear
2015
Firstpage
4
Lastpage
9
Abstract
In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore´s law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.
Keywords
"Inverters","Logic gates","Tunneling","CMOS integrated circuits","Leakage currents","Heterojunctions"
Publisher
ieee
Conference_Titel
European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st
ISSN
1930-8833
Print_ISBN
978-1-4673-7470-5
Type
conf
DOI
10.1109/ESSCIRC.2015.7313815
Filename
7313815
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