Title :
μRNG: A 300–950mV 323Gbps/W all-digital full-entropy true random number generator in 14nm FinFET CMOS
Author :
Sanu Mathew;David Johnston;Paul Newman;Sudhir Satpathy;Vikram Suresh;Mark Anders;Himanshu Kaul;Gregory Chen;Amit Agarwal;Steven Hsu;Ram Krishnamurthy
Author_Institution :
Circuits Research Lab, Intel Corporation, Hillsboro, OR 97124
Abstract :
An all-digital full-entropy True Random Number Generator (TRNG) with measured 1.3GHz operation and total power consumption of 1.5mW at 0.75V, 25oC is fabricated in 14nm FinFET CMOS. Three independent self-calibrating entropy sources, coupled with pre-extraction correlation suppressors and a real-time BIW extractor enable ultra-low energy consumption of 3pJ/bit, while generating cryptographic-quality keys with measured Shannon entropy up to 0.99999999995 and lower-bound min-entropy >0.99. The 100% digital design enables a compact layout occupying 1088μm2, with scalable operation down to 300mV, while passing all NIST statistical randomness tests.
Keywords :
"Entropy","Voltage measurement","CMOS integrated circuits","Power measurement","Correlation","Generators","Cryptography"
Conference_Titel :
European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st
Print_ISBN :
978-1-4673-7470-5
DOI :
10.1109/ESSCIRC.2015.7313842