DocumentCode :
3682302
Title :
A 5.1mW 74dB DR CT ΔΣ modulator with quantizer intrinsic ELD compensation achieving 75fJ/conv.-step in a 20MHz BW
Author :
Chongjun Ding;Yiannos Manoli;Matthias Keller
Author_Institution :
Fritz Huettinger Chair of Microelectronics, Department of Microsystems Engineering - IMTEK, University of Freiburg, Germany
fYear :
2015
Firstpage :
213
Lastpage :
216
Abstract :
A third-order continuous-time Delta-Sigma modulator in a 130 nm CMOS technology is presented. It features a 3-bit quantizer with an intrinsic excess loop delay compensation for half a clock cycle. The compensation is performed by means of adapting the reference voltages of the comparators on a sampling-to-sampling base, thus overcoming a power consuming summation of signals in front of the quantizer. Occupying merely 0.086mm2, the modulator achieves 66.4 dB SNDR and 74.6 dB DR in a 20 MHz bandwidth using a 640 MHz clock frequency. The power consumption equals 5.1 mW drawn from a 1.2 V supply voltage, which yields a state-of-the-art Walden figure of merit FOMW of 74.7 fJ/conv-step.
Keywords :
"Modulation","Clocks","Bandwidth","Gain","Transistors","Switches","Signal to noise ratio"
Publisher :
ieee
Conference_Titel :
European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st
ISSN :
1930-8833
Print_ISBN :
978-1-4673-7470-5
Type :
conf
DOI :
10.1109/ESSCIRC.2015.7313865
Filename :
7313865
Link To Document :
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