• DocumentCode
    3682796
  • Title

    Prefetch-based dynamic row buffer management for LPDDR2-NVM devices

  • Author

    Jaehyun Park;Donghwa Shin;Hyung Gyu Lee

  • Author_Institution
    Dept. of EECS, Seoul National University, South Korea
  • fYear
    2015
  • Firstpage
    98
  • Lastpage
    103
  • Abstract
    LPDDR2-NVM has been announced as an industry standard to efficiently interface with non-volatile memory devices such as phase change memory (PCM). This standard interface has been adopted in most commercial PCM devices. In this paper, we devise a prefetch-based dynamic row buffer management that targets the LPDDR2-NVM devices for enhancing performance with almost negligible implementation overhead. Our extensive simulations with timing parameters from the industry´s commercial PCM devices demonstrate that the proposed method enhances the performance of memory systems up to 11.3% when compared with the static optimum configuration with fairly low-cost overheads.
  • Keywords
    "Prefetching","Phase change materials","Computer architecture","Random access memory","Performance evaluation","Standards","Radiation detectors"
  • Publisher
    ieee
  • Conference_Titel
    Very Large Scale Integration (VLSI-SoC), 2015 IFIP/IEEE International Conference on
  • Electronic_ISBN
    2324-8440
  • Type

    conf

  • DOI
    10.1109/VLSI-SoC.2015.7314399
  • Filename
    7314399