Title :
250 GHz SiGe-BiCMOS Cascaded Single-Stage Distributed Amplifier
Author :
Paolo Valerio Testa;Robert Paulo;Corrado Carta;Frank Ellinger
Author_Institution :
Tech. Univ., Dresden, Germany
Abstract :
This paper presents a cascaded single-stage distributed amplifier (CSSDA) for wideband applications implemented in a 0.13 μm SiGe BiCMOS technology (ft = 300 GHz, fmax = 500 GHz). A 3 dB upper frequency of 250 GHz, a bandwidth of 170 GHz, and a gain of 13 dB are demonstrated for the fabricated CSSDA. The circuit requires a chip area of 0.23 mm2 and 74 mW of DC power. Compared against the state of the art, the presented design achieves the highest speed and the smallest area.
Keywords :
"Gain","Bandwidth","Distributed amplifiers","Silicon germanium","BiCMOS integrated circuits","Capacitors","Resistors"
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
DOI :
10.1109/CSICS.2015.7314459