• DocumentCode
    3682855
  • Title

    300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs

  • Author

    Hiroshi Hamada;Toshihiko Kosugi;Ho-Jin Song;Makoto Yaita;Amine El Moutaouakil;Hideaki Matsuzaki;Akihiko Hirata

  • Author_Institution
    NTT Device Technol. Labs., NTT Corp., Atsugi, Japan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a module for a 300-GHz, 20-Gbps amplitude-shift keying (ASK) transmitter using monolithic microwave integrated circuits (MMICs) based on 80-nm-gate InP high-electron-mobility-transistor (InP-HEMT) technology. The MMICs consist of a power amplifier and modulator circuit. Output power of 9.5 dBm at 300 GHz was achieved in the power amplifier module by utilizing the back side DC power line in the chip layout. A travelling-wave switch used as an ASK modulator exhibited group delay deviation of ± 3.9 ps, which is small enough to achieve 20 Gbps modulation. Back-to-back data transmission at 300 GHz was demonstrated in an experiment using the ASK transmitter module. A Q factor of 6.3 was obtained as the receiver eye pattern, which is equivalent to a bit error rate (BER) of <; 1 × 10-9 with 20 Gbps data transmission at 300 GHz frequency.
  • Keywords
    "Amplitude shift keying","MMICs","Power amplifiers","Delays","Logic gates","Radio transmitters"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CSICS.2015.7314461
  • Filename
    7314461