DocumentCode :
3682883
Title :
Challenges & Solutions for High Volume Production in SiGe BICMOS & CMOS Technologies for High-Frequency and Optical Communications
Author :
Philippe Galy;Pascal Chevalier
Author_Institution :
STMicroelectron., Crolles, France
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents the main results of advanced BICMOS and CMOS technologies able to address new challenges in high speed optical and wireless communications for customer products and markets. Typically smart phones, smart cars, IoT and WLC massive data transfer are in our daily life. Thus, features and performances of active and passive devices on bulk and UTBB FDSOI technologies are discussed. Process, device topologies and RF characterizations of state of the art SiGe HBT BiCMOS55 and MOS transistors are mainly shown even for low power applications. Moreover, to reach high volume production, the Electro-Static Discharge (ESD) high frequency protection is one key contributor in this frame. This last point will be focused in term of generic approaches and solutions for integrated circuit designers.
Keywords :
"Electrostatic discharges","CMOS integrated circuits","BiCMOS integrated circuits","CMOS technology","Radio frequency","Silicon germanium","Heterojunction bipolar transistors"
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
Type :
conf
DOI :
10.1109/CSICS.2015.7314490
Filename :
7314490
Link To Document :
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