Title :
HBT Model Scaling for Different Epi Materials and Geometries
Author :
Yingying Yang;Peter J. Zampardi;Kai Kwok
Author_Institution :
Skyworks Solutions, Inc., Newbury Park, CA, USA
Abstract :
In this paper, we extend our previous physics-based scalable models to include the scaling of transit time with base thickness and base doping based on a design of experiment (DOE) and to include the variation of ledge length as a device design parameter.
Keywords :
"Heterojunction bipolar transistors","Semiconductor process modeling","Mathematical model","Optical wavelength conversion","Current density","Inductors","Doping"
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
DOI :
10.1109/CSICS.2015.7314506
