DocumentCode :
3682901
Title :
High Frequency InGaAs Nanowire MOSFETs
Author :
E. Lind
Author_Institution :
Dept. of Electr. &
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
We present compact modeling, DC and RF characterization of lateral and vertical nanowire MOSFETs. Lateral tri-gate nanowire devices on InP substrates have demonstrated a maximum gm=2.95 mS/μm at VDS=0.5 V, and fT/fmax=290/350 GHz. Vertical gate-all-around InAs wires integrated on Si substrates have demonstrated gm=1.35 mS/μm and fT/fmax=100/155 GHz. We also demonstrate a non-parabolic, ballistic charge/current compact model for rectangular nanowire FETs.
Keywords :
"Logic gates","Nanoscale devices","Wires","MOSFET","Capacitance","Substrates"
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
Type :
conf
DOI :
10.1109/CSICS.2015.7314508
Filename :
7314508
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3682901
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