• DocumentCode
    3682901
  • Title

    High Frequency InGaAs Nanowire MOSFETs

  • Author

    E. Lind

  • Author_Institution
    Dept. of Electr. &
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present compact modeling, DC and RF characterization of lateral and vertical nanowire MOSFETs. Lateral tri-gate nanowire devices on InP substrates have demonstrated a maximum gm=2.95 mS/μm at VDS=0.5 V, and fT/fmax=290/350 GHz. Vertical gate-all-around InAs wires integrated on Si substrates have demonstrated gm=1.35 mS/μm and fT/fmax=100/155 GHz. We also demonstrate a non-parabolic, ballistic charge/current compact model for rectangular nanowire FETs.
  • Keywords
    "Logic gates","Nanoscale devices","Wires","MOSFET","Capacitance","Substrates"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CSICS.2015.7314508
  • Filename
    7314508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3682901