Title :
Progress in InP HEMT Submillimeter Wave Circuits and Packaging
Author :
K. Leong;X. B. Mei;W. Yoshida;M. Lange;A. Zamora;B. Gorospe;W. R. Deal
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
Abstract :
In the paper, we report on recent progress in scaling InP HEMT MMIC technology to Submillimeter (SMMW) and Terahertz (THz) frequencies. We show that amplification has reached 0.85 THz, with low noise and power amplification in packaged amplifiers at this frequency. Moreover, we show that the entire receiver and exciter function, including mixing and frequency multiplication can be accomplished in the same technology.
Keywords :
"Substrates","Indium phosphide","III-V semiconductor materials","Receivers","HEMTs","Integrated circuits"
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
DOI :
10.1109/CSICS.2015.7314521
