• DocumentCode
    3683126
  • Title

    HBM failures induced by ESD cell turn-off and circuit interaction with ESD protection

  • Author

    Yang Xiao;Ann Concannon;Rajkumar Sankaralingam

  • Author_Institution
    Analog ESD Lab, Texas Instruments, 12500 TI Blvd, Dallas, 75423, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Limited ESD simulations are often combined with topology checks to avoid ESD weaknesses arising from transient circuit interaction with ESD protection. In this work, we focus on a product designed using such a methodology exhibiting HBM failures. The failures were narrowed down to circuit interaction at ESD cell turn-on and turn-off.
  • Keywords
    "Electrostatic discharges","Computer architecture","Microprocessors","Stress","Resistors","Voltage measurement","Hardware design languages"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
  • Type

    conf

  • DOI
    10.1109/EOSESD.2015.7314762
  • Filename
    7314762