• DocumentCode
    3683137
  • Title

    ESD failure caused by parasitic SCR in an overvoltage tolerant I/O

  • Author

    D. Alvarez;M. Wendel;A. Stuffer

  • Author_Institution
    Infineon Technologies, 85579-Neubiberg, Germany
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    A new type of ESD failure in an overvoltage tolerant I/O of a CMOS embedded flash technology is presented. The failure is caused by the triggering of a parasitic SCR formed by high voltage devices between I/O and supply. Several solutions to prevent the failure are shown.
  • Keywords
    "Electrostatic discharges","Thyristors","Stress","Voltage measurement","Current measurement","Resistors","CMOS integrated circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
  • Type

    conf

  • DOI
    10.1109/EOSESD.2015.7314773
  • Filename
    7314773
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3683137