DocumentCode :
3683142
Title :
Engineering of dual-direction SCR cells for component and system level ESD, surge, and longer EOS events
Author :
Augusto Tazzoli;Vladislav Vashchenko
Author_Institution :
Maxim Integrated Corp., 160 Rio Robles, San Jose, CA, 95134, USA
fYear :
2015
Firstpage :
1
Lastpage :
7
Abstract :
Bidirectional SCRs were developed and experimentally validated as a viable solution to protect against component and system level ESD events, surge transients, and even longer EOS stresses. Engineering of both device front- and back-end allowed obtaining low leakage and capacitance, and a linear scalability of passing level upon device width.
Keywords :
"Surges","Thyristors","Stress","Layout","Electrostatic discharges","Surge protection","Hidden Markov models"
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
Type :
conf
DOI :
10.1109/EOSESD.2015.7314780
Filename :
7314780
Link To Document :
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