• DocumentCode
    3683145
  • Title

    Wear out effects in ESD characterization and testing

  • Author

    Theo Smedes;Dolphin Abessolo-Bidzo

  • Author_Institution
    NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, the Netherlands
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    Wear out effects resulting from multiple stresses may have significant impact on ESD characterization and testing. This is shown in examples of (vf-)TLP, HMM and CDM results on test structures and products. Wear out effects lead to lower failure levels and should be minimized to obtain the correct pass/fail levels.
  • Keywords
    "Stress","Electrostatic discharges","Silicides","Degradation","Hidden Markov models","Qualifications","Metals"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
  • Type

    conf

  • DOI
    10.1109/EOSESD.2015.7314783
  • Filename
    7314783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3683145